CSD18511Q5AT دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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CSD18511Q5AT
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حجم فایل
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85.286
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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13
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Texas Instruments CSD18511Q5AT
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
104W
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Total Gate Charge (Qg@Vgs):
63nC@10V
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Drain Source Voltage (Vdss):
40V
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Input Capacitance (Ciss@Vds):
5850pF@10V
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Continuous Drain Current (Id):
159A
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Gate Threshold Voltage (Vgs(th)@Id):
2.45V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
3.5mΩ@24A,4.5V
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Package:
VSONP-8
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Manufacturer:
Texas Instruments
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FET Type:
N-Channel
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Vgs(th) (Max) @ Id:
2.45V @ 250µA
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Base Part Number:
CSD1851
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Supplier Device Package:
8-VSONP (5x6)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Input Capacitance (Ciss) (Max) @ Vds:
5850pF @ 10V
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FET Feature:
-
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Drain to Source Voltage (Vdss):
40V
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Current - Continuous Drain (Id) @ 25°C:
159A (Tc)
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Mounting Type:
Surface Mount
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Rds On (Max) @ Id, Vgs:
3.5mOhm @ 24A, 4.5V
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Packaging:
Cut Tape (CT)
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Series:
NexFET™
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Package / Case:
8-PowerTDFN
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Gate Charge (Qg) (Max) @ Vgs:
63nC @ 10V
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Vgs (Max):
±20V
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Part Status:
Active
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Power Dissipation (Max):
104W (Tc)
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Technology:
MOSFET (Metal Oxide)
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detail:
N-Channel 40V 159A (Tc) 104W (Tc) Surface Mount 8-VSONP (5x6)
